BARDEEN, J. & BRATTAIN, W. H. ‘The transistor, a semi-conductor triode,’ pp. 230-1 [AND] BRATTAIN, W. H. & BARDEEN, J. ‘Nature of the forward current in Germanium point contacts,’ pp. 231-2 [AND] SHOCKLEY, W. & PEARSON, W. L. ‘Modulation of conductance of thin films of semi-conductors by surface charges,’ pp. 232-3, in Physical Review Vol. 74, No. 2, July 15, 1948. [Offered with:] BARDEEN, J. & BRATTAIN, W. H. ‘Physical principles involved in transistor action,’ pp. 1208-25 in Physical Review Vol. 75, No. 8, April 15, 1949. [Offered with:] SHOCKLEY, William, SPARKS, Morgan & TEAL, Gordon K. ‘p-n junction transistors,’ pp. 151-162 in Physical Review Vol. 83, No. 1, July 1, 1951.
Lancaster, PA., and New York: American Physical Society, 1948; 1949; 1951. First edition, journal issues, documenting the invention of the transistor, “which has been called ‘the most important invention of the 20th Century.’ Developed from semiconductor material, the transistor was the first device that could both amplify an electrical signal..... More
Item #4566